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Si3430DV
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
FEATURES
ID (A)
2.42.3
rDS(on) (W)
0.170 @ VGS = 10 V0.185 @ VGS = 6.0 V
DHigh-Efficiency PWM OptimizedD100% Rg Tested
TSOP-6Top View
13 mm65(3) G
34(1, 2, 5, 6) D
22.85 mm(4) SOrdering Information: Si3430DV-T1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source VoltageGate-Source Voltage
Continuous Drain Current (TJ = 175_C)aPulsed Drain CurrentAvalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)Continuous Source Current (Diode Conduction)aMaximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_CTA = 85_CL = 01 mHL = 0.1 mHTA = 25_CTA = 85_C
Symbol
VDSVGSIDIDMIAREARISPDTJ, Tstg
5 secs
100\"20
2.41.7
861.8
1.72.01.0
Steady StateUnit
V
1.81.3
A
mJ
1.01.140.59
AW_C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
MiMaximum Junction-to-AmbientJtitAbitaMaximum Junction-to-Foot (Drain)Notes
a.Surface Mounted on 1” x 1” FR4 Board.Document Number: 71235S-31725—Rev. B, 18-Aug-03
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t v 5 secSteady StateSteady State
RthJARthJF
SymbolTypical
459025
Maximum
62.511030
Unit
_C/W
1
元器件交易网www.cecb2b.com
Si3430DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold VoltageGate-Body Leakage
Zero Gate Voltage Drain CurrentOn-State Drain Currenta
Drain-Source On-State ResistanceaForward TransconductanceaDiode Forward Voltagea
VGS(th)IGSSIDSSID(on)rDS(on)gfsVSD
VDS = VGS, ID = 250 mAVDS = 0 V, VGS = \"20 VVDS = 80 V, VGS = 0 VVDS = 80 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 VVGS = 10 V, ID = 2.4 AVGS = 6.0 V, ID = 2.3 AVDS = 15 V, ID = 2.4 AIS = 1.7 A, VGS = 0 V
8
0.1480.16070.8
1.20.1700.185
2
\"100125
VnAmAAWSV
SymbolTest ConditionMinTypMaxUnit
Dynamicb
Total Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall TimeGate Resistance
Source-Drain Reverse Recovery Time
QgQgsQgdRgtd(on)trtd(off)tfRgtrr
VGS = 0.1 V, f = 5 MHzIF = 1.7 A, di/dt = 100 A/msVDD = 50 V, RL = 50 W
ID^ 1 A, VGEN = 10 V, RG = 6 W
1
9111692.850
80
VDS = 50 V, VGS = 10 V, ID = 2.4 A
5.51.51.4
420203020
WnsnsW
6.6
nC
Notes
a.Pulse test; pulse width v300 ms, duty cycle v2%.b.Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Output Characteristics8VGS = 10 thru 6 V5 V6ID- Drain Current (A)ID- Drain Current (A)68Transfer Characteristics4424 V00.0
2TC = 125_C25_C-55_C00.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 71235S-31725—Rev. B, 18-Aug-03
www.vishay.com
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元器件交易网www.cecb2b.com
Si3430DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.25
rDS(on)- On-Resistance (W)500
Capacitance
VGS = 6.0 V0.15
VGS = 10 VC - Capacitance (pF)0.20400Ciss300
0.10200
0.05100CrssCoss0.00
0
2
4
ID - Drain Current (A)
6
8
00
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Gate Charge
10
VGS- Gate-to-Source Voltage (V)VDS = 50 VID = 2.4 A8
2.22.01.81.61.41.21.00.8
00
1
2
3
4
5
6
Qg - Total Gate Charge (nC)
0.6-50
On-Resistance vs. Junction Temperature
VGS = 10 VID = 2.4 A6
4
2
rDS(on)- On-Resistance (W)(Normalized)-250255075100125150
TJ - Junction Temperature (_C)Source-Drain Diode Forward Voltage
10
0.4
On-Resistance vs. Gate-to-Source VoltagerDS(on)- On-Resistance (W)IS- Source Current (A)0.3
ID = 2.4 ATJ = 150_C0.2
0.1
TJ = 25_C10.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 71235S-31725—Rev. B, 18-Aug-03
www.vishay.com
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元器件交易网www.cecb2b.comSi3430DVVishay SiliconixTYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Threshold Voltage0.60.40.2VGS(th)Variance (V)-0.0-0.2-0.4-0.6-0.8-1.0-50500.01ID = 250 mA20Power (W)3025Single Pulse Power1510-2502550751001251500.11Time (sec)10100600TJ - Temperature (_C)Normalized Thermal Transient Impedance, Junction-to-Ambient21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (sec)Notes:PDMt1t21. Duty Cycle, D =2. Per Unit Base = RthJA = 90_C/W3. TJM - TA = PDMZthJA(t)4. Surface Mountedt1t210100600Normalized Thermal Transient Impedance, Junction-to-Foot21
Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.1
0.050.02Single Pulse0.01
10-410-310-210-1Square Wave Pulse Duration (sec)
110www.vishay.com
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Document Number: 71235S-31725—Rev. B, 18-Aug-03
