专利内容由知识产权出版社提供
专利名称：High-voltage transistor with high current
load capacity and method for its production
发明人：Georg Röhrer申请号：US12578256申请日：20091013公开号：US09276109B2公开日：20160301
专利附图：
摘要：An isolation area () is provided over a drift region () with a spacing (d) to acontact area () provided for a drain connection (D). The isolation area is used as animplantation mask, in order to produce a dopant profile of the drift region in which the
dopant concentration increases toward the drain. The implantation of the dopant can beperformed instead before the production of the isolation area, and the later productionof the isolation area () changes the dopant profile also in a way that the dopantconcentration increases toward the drain.
申请人：Georg Röhrer
地址：Graz AT
国籍：AT
代理机构：McDermott Will & Emery LLP
更多信息请下载全文后查看
