专利内容由知识产权出版社提供
专利名称：Grooved Schottky barrier photodiode for
infrared sensing
发明人：Rudolph H. Dyck,Jae S. Kim申请号：US07/135816申请日：19871221公开号：US04876586A公开日：191024
摘要：A sensor optimized for detecting infrared radiation is formed by a Schottkybarrier photodiode having a corrugated upper surface upon which a thin layer of metalsilicide is deposited. The corrugated surface is formed by selective etching of a (100)silicon wafer to expose the (111) crystalline plane.
申请人：SANGAMO-WESTON, INCORPORATED
代理机构：Townsend and Townsend
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