FDN357N_NL资料

March 1998 FDN357N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 N-Channel logic level enhancement mode powerfield effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This very highdensity process is especially tailored to minimize on-stateresistance. These devices are particularly suited for low voltageapplications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very smalloutline surface mount package.1.9 A, 30 V, RDS(ON) = 0.090 Ω @ VGS = 4.5 V RDS(ON) = 0.060 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mountpackage using proprietary SuperSOTTM-3 design forsuperior thermal and electrical capabilities.High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC currentcapability. SOT-23SuperSOT-6TMSuperSOTTM-8SO-8SOT-223SOIC-16 DD735SSuperSOT -3TMGGSAbsolute Maximum Ratings TA = 25oC unless other wise noted SymbolVDSSVGSSIDPDTJ,TSTGRθJARθJCParameterDrain-Source VoltageGate-Source Voltage - ContinuousDrain/Output Current - Continuous - PulsedMaximum Power Dissipation (Note 1a) (Note 1b)FDN357N30±201.9100.50.46-55 to 150UnitsVVAWOperating and Storage Temperature Range°CTHERMAL CHARACTERISTICSThermal Resistance, Junction-to-Ambient (Note 1a)Thermal Resistance, Junction-to-Case (Note 1) 250 75°C/W°C/W© 1998 Fairchild Semiconductor Corporation

FDN357N Rev.C

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Electrical Characteristics (TA = 25 OC unless otherwise noted )SymbolBVDSSParameterDrain-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientZero Gate Voltage Drain CurrentConditionsVGS = 0 V, ID = 250 µAID = 250 µA, Referenced to 25 oCVDS = 24 V, VGS = 0 VTJ = 55°CIGSSFIGSSRVGS(th)Gate - Body Leakage, ForwardGate - Body Leakage, ReverseGate Threshold VoltageGate Threshold Voltage Temp. CoefficientStatic Drain-Source On-ResistanceVGS = 20 V,VDS = 0 VVGS = -20 V, VDS = 0 VVDS = VGS, ID = 250 µAID = 250 µA, Referenced to 25 oCVGS = 4.5 V, ID = 1.9 ATJ =125°CVGS = 10 V, ID = 2.2 AID(ON)gFSCissCossCrsstD(on)trtD(off)tfQgQgsQgdISVSD Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed bydesign while RθCA is determined by the user's board design. Typical RθJA using the board layouts shown below on 4.5\"x5\" FR-4 PCB in a still air environment : Min30TypMaxUnitsVOFF CHARACTERISTICSmV/ oC110100-10011.6-3.60.0810.110.0535523514550VDD = 10 V, ID = 1 A,VGS = 10 V, RGEN = 6 Ω512123VDS = 10 V, ID = 1.9 A,VGS = 5 V4.21.31.70.420.711.210222285.90.090.140.06AS pF pF pFnsnsnsnsnCnCnCAV2µAµAnAnAVmV/ oC∆BVDSS/∆TJIDSS36 ON CHARACTERISTICS (Note)∆VGS(th)/∆TJRDS(ON)ΩOn-State Drain CurrentForward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTurn - On Delay TimeTurn - On Rise TimeTurn - Off Delay TimeTurn - Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeVGS = 4.5 V, VDS = 5 VVDS = 5 V, ID = 1.9 AVDS = 10 V, VGS = 0 V, f = 1.0 MHzDYNAMIC CHARACTERISTICSSWITCHING CHARACTERISTICS (Note)DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSMaximum Continuous Drain-Source Diode Forward CurrentDrain-Source Diode Forward VoltageVGS = 0 V, IS = 0.42 A (Note) a. 250C/W when mounted on o a 0.02 in pad of 2oz Cu.2b. 270oC/W when mounted ona 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDN357N Rev.C

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Typical Electrical Characteristics 10I D , DRAIN-SOURCE CURRENT (A)R S ( O ) , NORMALIZEDDN8 6.0DRAIN-SOURCE ON-RESISTANCE V = 10VGS 5.0 4.5 4.0 1.81.61.41.210.80.60.40246810V =3.5VGS6 3.54 4.0 4.5 5.0 6.0 7.0102 3.0000.511.522.53V , DRAIN-SOURCE VOLTAGE (V)DS I , DRAIN CURRENT (A)DFigure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with Drain Current and GateRD N ) , DRAIN-SOURCE ON-RESISTANCES( O1.6DRAIN-SOURCE ON-RESISTANCE 0.25I = 1.9AD1.4I =0.95AD0.2V = 4.5VGSR S ( O N ) , NORMALIZEDD1.20.1510.1T = 125°CAT = 25°CA0.80.050.6-50-250255075100T , JUNCTION TEMPERATURE (°C)J1251500246810V ,GATE TO SOURCE VOLTAGE (V)GSFigure 3. On-Resistance Variation with Temperature.Figure 4. On-Resistance Variation with Gate-to-Source Voltage.1412I D , DRAIN CURRENT (A)10820125°C125°CI , REVERSE DRAIN CURRENT (A)SV = 10VDST = -55°CA10V = 0VGS1T = 125°CJ25°C -55°C0.10.010.001234560.000100.20.40.60.811.2V , GATE TO SOURCE VOLTAGE (V)GSV , BODY DIODE FORWARD VOLTAGE (V)SDFigure 5. Transfer Characteristics.Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.FDN357N Rev.C

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Typical Electrical And Thermal Characteristics 10V S , GATE-SOURCE VOLTAGE (V)G600I = 1.9AD8CAPACITANCE (pF)V = 5VDS10V15V300200C issC oss61004502200.1f = 1 MHzV = 0 VGS 0.20.512510C rss030024Q , GATE CHARGE (nC)g68V , DRAIN TO SOURCE VOLTAGE (V)DSFigure 7. Gate Charge Characteristics.Figure 8. Capacitance Characteristics.2010I D , DRAIN CURRENT (A)5ITIM) LNS(ORD501ms10m40sPOWER (W)30SINGLE PULSER =250° C/W θJAT = 25°CA10.5100 1s10sms200.10.05V = 10VGSSINGLE PULSER = 250°C/WθJAT = 25°CAA0.20.512DC100.010.100.000151020500.0010.010.1110100300SINGLE PULSE TIME (SEC) V , DRAIN-SOURCE VOLTAGE (V)DSFigure 9. Maximum Safe Operating Area.Figure 10. Single Pulse Maximum Power Dissipation.1r(t), NORMALIZED EFFECTIVETRANSIENT THERMAL RESISTANCE0.50.20.10.050.020.010.0050.002 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R (t) = r(t) * R θJAθJA R = 250 °C/W θJA t 1 t 2T - T = P * R (t)JAθJADuty Cycle, D = t /t120.0010.010.1t , TIME (sec)11101003000.0010.0001Figure 11. Transient Thermal Response Curve.Note: Thermal characterization performed using the conditions described in note 1a. Transient thermal response will change depending on the circuit board design. FDN357N Rev.C

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TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOSTMEnSignaTMFACT™FACT Quiet Series™DISCLAIMERFAST®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™STAR*POWER is used under licenseFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or2. A critical component is any component of a lifesystems which, (a) are intended for surgical implant intosupport device or system whose failure to perform canthe body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the lifefailure to perform when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, can beeffectiveness.reasonably expected to result in significant injury to theuser.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative orIn DesignDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.PreliminaryFirst ProductionNo Identification NeededFull ProductionObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. H4