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专利名称：Methods of forming trench isolation within a
semiconductor substrate including, Tshapedtrench with spacers
发明人：Sanh D. Tang申请号：US10206171申请日：20020726公开号：US06727150B2公开日：20040427
专利附图：
摘要：A method of forming trench isolation within a semiconductor substrate includesforming a first isolation trench of a first open dimension within a semiconductor
substrate. The first isolation trench has a base. A second isolation trench is formed intothe semiconductor substrate through the base of the first isolation trench. The secondisolation trench has a second open dimension along a line parallel with the first opendimension which is less than the first open dimension. Insulative isolation material isformed within the first and second isolation trenches. The insulative isolation material hasa void therein extending from within the second isolation trench to the first isolationtrench. Other aspects and implementations are contemplated.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Wells St. John P.S.
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