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专利名称：Integrated circuits and methods of forming
the same
发明人：Hsiao-Tsung Yen,Hsien-Pin Hu,Jhe-Ching
Lu,Chin-Wei Kuo,Ming-Fa Chen,Sally Liu
申请号：US12795734申请日：20100608公开号：US08362591B2公开日：20130129
专利附图：
摘要：A three-dimensional integrated circuit includes a semiconductor substratewhere the substrate has an opening extending through a first surface and a second
surface of the substrate and where the first surface and the second surface are oppositesurfaces of the substrate. A conductive material substantially fills the opening of thesubstrate to form a conductive through-substrate-via (TSV). An active circuit is disposedon the first surface of the substrate, an inductor is disposed on the second surface of thesubstrate and the TSV is electrically coupled to the active circuit and the inductor. Thethree-dimensional integrated circuit may include a varactor formed from a dielectric layerformed in the opening of the substrate such that the conductive material is disposedadjacent the dielectric layer and an impurity implanted region disposed surrounding theTSV such that the dielectric layer is formed between the impurity implanted region andthe TSV.
申请人：Hsiao-Tsung Yen,Hsien-Pin Hu,Jhe-Ching Lu,Chin-Wei Kuo,Ming-Fa Chen,SallyLiu
地址：Tainan TW,Zhubei TW,Tainan TW,Zhubei TW,Taichung TW,HsinChu TW
国籍：TW,TW,TW,TW,TW,TW
代理机构：Duane Morris LLP
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