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S8050LT1PLASTIC-ENCAPSULATE TRANSISTORSSOT—23
S8050LT1 TRANSISTOR （ NPN ）FEATURES
Power dissipation
PCM : 0.3 W（Tamb=25℃） Collector current
ICM : 0.5 A Collector-base voltage
: 40 V V(BR)CBO
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cut-off currentCollector cut-off currentEmitter cut-off current
SymbolV(BR)CBOV(BR)CEOV(BR)EBO ICBO ICEO IEBO HFE(1)
DC current gain(note)
HFE(2)
Collector-emitter saturation voltageBase-emitter saturation voltageBase-emitter voltage
VCE(sat)VCE(sat) VBE
VCE=1V, IC= 500mAIC=500 mA, IB= 50mAIC=500 mA, IB= 50mAIE= 100mAVCE=6V, IC= 20mA
Transition frequency
50
0.61.21.4
V V
Test conditionsIc= 100μA， IE=0Ic= 0.1mA， IB=0IE=100μA， IC=0VCB=40 V , IE=0VCB=20V , IE=0VEB= 5V , IC=0VCE=1V, IC= 50mA
120 MIN 40255
0.10.10.1 350
TYP
MAX
UNIT V VV
μAμAμA
fT
150MHz
f=30MHz
H200-350
CLASSIFICATION OF HFE(1)
RankRange
L100-200
DEVICE MARKING : S8050LT1=J3Y
Wing Shing Computer Components Co., (H.K.)Ltd.Homepage:http://www.wingshing.comTel:(852)2341 9276 Fax:(852)2797 8153E-mail: wsccltd@hkstar.com
