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专利名称：Semiconductor switching device发明人：Yoshihide Osada,Syuji Sugioka申请号：US06/092727申请日：19791109公开号：US04325074A公开日：19820413
摘要：Provided is a semiconductor switching device having a four- layer structure. Asecond semiconductor layer of the switching device has a depth of 8&mgr;. The thicknessof the second semiconductor layer is set at a value less than a value four times thethickness of a depletion layer which is formed in the second semiconductor layer whenbreakover voltage has been applied to the switching device.
申请人：TOKYO SHIBAURA ELECTRIC CO., LTD.
代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner
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