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专利名称：Dielectric element
发明人：Matsushita, Shigeharu,Harada, Mitsuaki申请号：EP003100.8申请日：20001114公开号：EP1102329A3公开日：20030924
专利附图：
摘要：A dielectric element employing an oxide-based dielectric film capable ofsuppressing oxidation of an electrode or deterioration of film characteristics of theoxide-based dielectric film is obtained. This dielectric element comprises an insulator filmincluding the oxide-based dielectric film (7, 15, 27, 52, 77) and the electrode including a
first conductor film (8, 12, 13, 25, 28, 50, 53, 75) containing at least a metal and silicon. Theaforementioned metal includes at least one metal selected from a group consisting of Ir,Pt, Ru, Re, Ni, Co and Mo. Thus, the aforementioned first conductor film serves as abarrier film for stopping diffusion of oxygen. In heat treatment for sintering the oxide-based dielectric film, therefore, oxygen is effectively inhibited from diffusing along grainboundaries of the electrode. Consequently, a conductive material located under theelectrode can be inhibited from oxidation.
申请人：Sanyo Electric Co., Ltd.
地址：5-5, Keihanhondori 2-chome Moriguchi-shi, Osaka-fu 570-8677 JP
国籍：JP
代理机构：Calderbank, Thomas Roger
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