专利内容由知识产权出版社提供
专利名称：Method for producing material of electronic
device
发明人：Takuya Sugawara,Toshio Nakanishi,Shigenori
Ozaki,Seiji Matsuyama,ShigemiMurakawa,Yoshihide Tada
申请号：US10466872申请日：20030718
公开号：US20040142577A1公开日：20040722
专利附图：
摘要：A process for producing electronic device (for example, high-performance MOS-
type semiconductor device) structure having a good electric characteristic, wherein anSiOfilm or SiON film is used as an insulating film having an extremely thin (2.5 nm or less,for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as anelectrode. In the presence of process gas comprising oxygen and an inert gas, plasmaincluding oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, orplasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating awafer W including Si as a main component with microwave via a plane antenna memberSPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thusgenerated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGeis formed, to thereby form an electronic device structure.
申请人：SUGAWARA TAKUYA,NAKANISHI TOSHIO,OZAKI SHIGENORI,MATSUYAMASEIJI,MURAKAWA SHIGEMI,TADA YOSHIHIDE
更多信息请下载全文后查看
